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Up to 30% more current with ABB’s enhanced IGBTs

The new enhanced 3300 V (volt) Trench and Planar 6500 V IGBT (insulated-gate bipolar transistor) modules offer highest current density and robust-ness enabling reduced losses.

With the arrival of the Enhanced Planar (SPT+) IGBT cell technology, ABB set a benchmark in device per-formance that yet still competes with Trench cell IGBTs. Nevertheless, the market continually demands increased performance. ABB has thus combined the merits of the Enhanced Planar cell with Trench tech-nology and created the Enhanced Trench TSPT+ and Enhanced Planar SPT++ IGBTs. Representing the lat-est generation IGBT cell technology, enabling a further loss reduction and hence the possibility to in-crease the current density.

ABB’s vast range of power semiconductors will be expanded with the following new products for trac-tion, power transmission & distribution, renewable energy and industrial markets:

TSPT+ 3300 V 1800A HiPak ABB has combined the benefits of the very low loss and ultra-rugged SPT+ technology with a latest trench cell design. This yields in further reduced losses and increased current density. Thus the new de-vice allows an increase in rated current of 20 percent compared to the previous 1500 A (ampere) genera-tion in the same housing. In addition the new 1800 A 3300 V HiPak is designed to cope with increased stray inductance values than the established SPT+ version.


SPT++ 6500 V 1000A HiPak The improved SPT++ technology boosts the rating of the 6500 V IGBT from 750 to 1000 A. In addition it allows the IGBT module to be operated up to Tvj (op) (operating junction temperature) = 150 °C with un-rivaled robustness. For improved performance in regenerative mode ABB has increased the diode area by 20 percent. This opens the potential to choose a smaller module size or eliminate parallel connection of modules.

"Innovation and quality are key for success," said Juergen Bernauer, Head of Global Product Group Semi-conductors. "It is our mission to drive innovation in power semiconductor technology together with our customers and to add value through best performance and quality. We strive to be the best and most forward-looking performer in our markets when it comes to reliability."

The new HiPaks’ are expected to be released for sale during quarter four, 2018. As a member of ABB’s IGBT family of high-power semiconductors, TSPT+ 3300 V 1800 A HiPak and SPT++ 6500 V 1000 A HiPak further reinforce HiPak’s decade-long position as the range of IGBTs to rely on. Both IGBT modules will be showcased together with other power semiconductors and technology highlights at PCIM Europe 2018 at the ABB booth in Hall 9, Stand 203.

ABB is a global leader in manufacturing high-power semiconductors with over 100 years of experience in power electronics. These key components are found at the heart of many leading ABB technologies, such as high voltage direct current (HVDC) transmission systems, flexible alternating current transmission systems (FACTS) and variable speed drives. Power semiconductors are also central to the development of a more reliable, smarter and greener grid.

ABB (ABBN: SIX Swiss Ex) is a pioneering technology leader in electrification products, robotics and mo-tion, industrial automation and power grids, serving customers in utilities, industry and transport & in-frastructure globally. Continuing a history of innovation spanning more than 130 years, ABB today is writing the future of industrial digitalization with two clear value propositions: bringing electricity from any power plant to any plug and automating industries from natural resources to finished products. As title partner of Formula E, the fully electric international FIA motorsport class, ABB is pushing the bound-aries of e-mobility to contribute to a sustainable future. ABB operates in more than 100 countries with about 135,000 employees.

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